Title :
Applications of site-specific scanning spreading resistance microscopy (SSRM) to failure analysis of production lines
Author :
Hayase, Y. ; Hara, Kentaro ; Ogata, Syuuji ; Li Zhang ; Akutsu, H. ; Kurihara, Masazumi ; Norimatsu, K. ; Nagamine, S.
Author_Institution :
Quality Assurance Dept., Oita Oper., Semicond. Co., Oita, Japan
Abstract :
Much attention has been paid to the site-specific scanning spreading resistance microscopy (SSRM) for visualizing impurity-diffusion layers because of its capability of failure analysis as well as analyzing scaled LSI devices. We report applications of the site-specific SSRM to failure analysis in LSI production lines for the first time. SSRM is shown to be capable of observing no implantation areas with high spatial resolution by combining with defect localization techniques. The combination of the site-specific SSRM with multiple failure analysis techniques in addition to design and process information has been demonstrated to be a powerful tool to find root causes in a short period.
Keywords :
failure analysis; large scale integration; microscopy; semiconductor industry; failure analysis; impurity-diffusion layers; production lines; scaled LSI devices; site-specific scanning spreading resistance microscopy; Abstracts; Companies; Electrodes; Metals; Nanoscale devices; Diffusion-layer visualization; LSI; PN junction; SCM; SSRM; carrier; dopant; failure analysis; impurity analysis; site-specific;
Conference_Titel :
Junction Technology (IWJT), 2012 12th International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-1258-5
Electronic_ISBN :
978-1-4673-1256-1
DOI :
10.1109/IWJT.2012.6212830