DocumentCode :
2275053
Title :
Applications of site-specific scanning spreading resistance microscopy (SSRM) to failure analysis of production lines
Author :
Hayase, Y. ; Hara, Kentaro ; Ogata, Syuuji ; Li Zhang ; Akutsu, H. ; Kurihara, Masazumi ; Norimatsu, K. ; Nagamine, S.
Author_Institution :
Quality Assurance Dept., Oita Oper., Semicond. Co., Oita, Japan
fYear :
2012
fDate :
14-15 May 2012
Firstpage :
146
Lastpage :
149
Abstract :
Much attention has been paid to the site-specific scanning spreading resistance microscopy (SSRM) for visualizing impurity-diffusion layers because of its capability of failure analysis as well as analyzing scaled LSI devices. We report applications of the site-specific SSRM to failure analysis in LSI production lines for the first time. SSRM is shown to be capable of observing no implantation areas with high spatial resolution by combining with defect localization techniques. The combination of the site-specific SSRM with multiple failure analysis techniques in addition to design and process information has been demonstrated to be a powerful tool to find root causes in a short period.
Keywords :
failure analysis; large scale integration; microscopy; semiconductor industry; failure analysis; impurity-diffusion layers; production lines; scaled LSI devices; site-specific scanning spreading resistance microscopy; Abstracts; Companies; Electrodes; Metals; Nanoscale devices; Diffusion-layer visualization; LSI; PN junction; SCM; SSRM; carrier; dopant; failure analysis; impurity analysis; site-specific;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Junction Technology (IWJT), 2012 12th International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-1258-5
Electronic_ISBN :
978-1-4673-1256-1
Type :
conf
DOI :
10.1109/IWJT.2012.6212830
Filename :
6212830
Link To Document :
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