Title :
Characterization of a new 4.5 kV press pack SPT+ IGBT for medium voltage converters
Author :
Alvarez, Rodrigo ; Filsecker, Felipe ; Bernet, Steffen
Author_Institution :
Power Electron. Group, Tech. Univ. Dresden, Dresden, Germany
Abstract :
Recently developed IGBT press pack devices have become a competition for IGCTs in high power industrial applications. This paper presents an overview of state-of-the-art medium voltage power semiconductors with active turn-off capability. A new 85 mm, 4.5 kV, 1.2 kA press pack SPT+ IGBT and the corresponding freewheeling diode are characterized at hard switching as a function of the parameters dc-link voltage, load current, junction temperature, stray inductance and gate unit conditions.
Keywords :
insulated gate bipolar transistors; power convertors; power semiconductor devices; semiconductor diodes; IGBT press pack devices; current 1.2 kA; dc-link voltage; freewheeling diode; gate unit conditions; hard switching; junction temperature; load current; medium voltage converters; medium voltage power semiconductors; power industrial applications; press pack SPT+ IGBT; soft punch through; stray inductance; voltage 4.5 kV;
Conference_Titel :
Energy Conversion Congress and Exposition, 2009. ECCE 2009. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-2893-9
Electronic_ISBN :
978-1-4244-2893-9
DOI :
10.1109/ECCE.2009.5316130
