Piezoelectric gate for a two-dimensional electron system transport in LiNbO3-GaAs/AlGaAs sandwich structures

Author

Korotchenkov, O.A. ; Polovina, O.I. ; Kurylyuk, V.V.

fYear

2007

fDate

27-31 May 2007

Firstpage

54

Lastpage

57

Abstract

Standing-wave piezoelectric fields in the LiNbO₃ driving plate are used to form depleted and accumulated electron densities in GaAs/AlGaAs quantum wells (QWs). The photoluminescence (PL) spectrum of the two-dimensional electron system (2DES) varies both spatially and temporally, exhibiting an electron-hole plasma recombination and exciton and trion emissions at large and small electron densities, respectively. Controlling the piezoelectric field component perpendicular to the quantum well layers offers a versatile tool to achieve the spatially indirect exciton luminescence in double QW structures.

Keywords

III-V semiconductors; aluminium compounds; electron density; electron-hole recombination; gallium arsenide; lithium compounds; photoluminescence; piezoelectric thin films; sandwich structures; semiconductor quantum wells; trions; 2D electron system transport; LiNbO₃-GaAs-AlGaAs; double quantum well structure; electron density; electron-hole plasma recombination; exciton emissions; photoluminescence; piezoelectric gate; sandwich structure; semiconductor quantum wells; spatially indirect exciton luminescence; standing-wave piezoelectric fields; trion emissions; Electric potential; Electron emission; Excitons; Gallium arsenide; Photoluminescence; Physics; Plasma density; Sandwich structures; Tensile stress; Two dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Conference_Location

Nara

ISSN

1099-4734

Print_ISBN

978-1-4244-1334-8

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2007.4393166

Filename

4393166