Title :
Study of carrier transport through GexSi1−x/Si heterojunctions by using 2D Monte Carlo simulation method
Author :
Wei, Kangliang ; Liu, Xiaoyan ; Du, Gang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
This work presents two-dimensional (2-D) self-consistent Monte Carlo (MC) simulation of the properties and physics underlying carrier transport through GexSi1-x/Si heterojunctions. Carrier transport in the two different semiconductor materials is included simultaneously and carrier crossing the heterojunction interface is modeled by the thermionic emission. The Si full-band structure obtained from the empirical pseudo potential method is taken into account; for GexSi1-x, the band structures also depict accurately the critical symmetry points in the Brillouin zone. Moreover, various scattering mechanisms have been employed, especially in the GexSi1-x alloy for which an approach is proposed from the individual scattering system of Si and Ge.
Keywords :
Brillouin zones; Monte Carlo methods; semiconductor heterojunctions; thermionic emission; 2D Monte Carlo simulation; 2D self-consistent Monte Carlo simulation; Brillouin zone; carrier crossing; carrier transport; critical symmetry points; full-band structure; heterojunction interface; scattering system; semiconductor materials; thermionic emission; Abstracts; Silicon;
Conference_Titel :
Junction Technology (IWJT), 2012 12th International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-1258-5
Electronic_ISBN :
978-1-4673-1256-1
DOI :
10.1109/IWJT.2012.6212835