Study of carrier transport through GexSi1−x/Si heterojunctions by using 2D Monte Carlo simulation method

This work presents two-dimensional (2-D) self-consistent Monte Carlo (MC) simulation of the properties and physics underlying carrier transport through Ge_xSi_1-x/Si heterojunctions. Carrier transport in the two different semiconductor materials is included simultaneously and carrier crossing the heterojunction interface is modeled by the thermionic emission. The Si full-band structure obtained from the empirical pseudo potential method is taken into account; for Ge_xSi_1-x, the band structures also depict accurately the critical symmetry points in the Brillouin zone. Moreover, various scattering mechanisms have been employed, especially in the Ge_xSi_1-x alloy for which an approach is proposed from the individual scattering system of Si and Ge.