DocumentCode :
2275181
Title :
Signal Form Influences on the Fatigue Behavior of PZT Thin Film Capacitors
Author :
Brauhaus, D. ; Schorn, P.J. ; Böttger, U. ; Waser, Rainer
Author_Institution :
RWTH Aachen Univ., Aachen
fYear :
2007
fDate :
27-31 May 2007
Firstpage :
69
Lastpage :
71
Abstract :
Fatigue is a commonly known failure mechanism in Pt/PZT/Pt thin film capacitors. The remnant polarization shows a fast drop after 105 to 106 bipolar switching cycles. The reason for this loss of switchable polarization is mainly unknown. We studied the influence of the used switching signal, especially the influence of its shape. A great number of fatigue measurements had to be taken to get reliable data. In order to reduce the measuring time a way to extrapolate the fatigue curve by one decade is introduced and show to be accurate with an error of below 1%. It is also shown that the leading edge of the switching signal has an influence on the fatigue behavior of Pt/PZT/Pt thin films.
Keywords :
MIM devices; dielectric hysteresis; dielectric polarisation; ferroelectric capacitors; ferroelectric switching; lead compounds; platinum; thin film capacitors; PZT; Pt-PZT-Pt; bipolar switching; fatigue; remnant polarization; thin film capacitors; Capacitors; Extrapolation; Failure analysis; Fatigue; Ferroelectric films; Nonvolatile memory; Polarization; Random access memory; Time measurement; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
ISSN :
1099-4734
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
Type :
conf
DOI :
10.1109/ISAF.2007.4393170
Filename :
4393170
Link To Document :
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