Signal Form Influences on the Fatigue Behavior of PZT Thin Film Capacitors

Author

Brauhaus, D. ; Schorn, P.J. ; Böttger, U. ; Waser, Rainer

Author_Institution

RWTH Aachen Univ., Aachen

fYear

2007

fDate

27-31 May 2007

Firstpage

69

Lastpage

71

Abstract

Fatigue is a commonly known failure mechanism in Pt/PZT/Pt thin film capacitors. The remnant polarization shows a fast drop after 105 to 106 bipolar switching cycles. The reason for this loss of switchable polarization is mainly unknown. We studied the influence of the used switching signal, especially the influence of its shape. A great number of fatigue measurements had to be taken to get reliable data. In order to reduce the measuring time a way to extrapolate the fatigue curve by one decade is introduced and show to be accurate with an error of below 1%. It is also shown that the leading edge of the switching signal has an influence on the fatigue behavior of Pt/PZT/Pt thin films.

Keywords

MIM devices; dielectric hysteresis; dielectric polarisation; ferroelectric capacitors; ferroelectric switching; lead compounds; platinum; thin film capacitors; PZT; Pt-PZT-Pt; bipolar switching; fatigue; remnant polarization; thin film capacitors; Capacitors; Extrapolation; Failure analysis; Fatigue; Ferroelectric films; Nonvolatile memory; Polarization; Random access memory; Time measurement; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Conference_Location

Nara

ISSN

1099-4734

Print_ISBN

978-1-4244-1334-8

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2007.4393170

Filename

4393170