Title :
Long-wavelength semiconductor ring mode-locked lasers incorporating passive deep-ridge waveguides
Author :
Ohno, T. ; Ishii, H. ; Matsuo, S. ; Okamoto, H. ; Kawaguchi, Y. ; Kondo, Y. ; Furuta, T. ; Ito, H. ; Yoshikuni, Y.
Author_Institution :
Photonics Labs., NTT Corp., Kanagawa, Japan
Abstract :
Summary form only given. We fabricated semiconductor ring mode-locked lasers using curved passive deep-ridge waveguide. A low threshold current of 25 mA was obtained by a ring laser without a saturable absorber. We also achieved hybrid mode-locking of the R-MLLDs at 29.5, 41.2, and 61.7 GHz with maximum optical modulation indices of 91.4, 87.6 and 42.0%, respectively.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser mode locking; optical pulse generation; ring lasers; semiconductor lasers; waveguide lasers; 25 mA; InGaAsP; InGaAsP active layer; hybrid mode-locking; long-wavelength semiconductor ring mode-locked lasers; low threshold current; maximum optical modulation indices; optical pulse generation; passive deep-ridge waveguides; Fiber lasers; Jitter; Laser mode locking; Laser noise; Laser theory; Phase noise; Ring lasers; Semiconductor lasers; Semiconductor waveguides; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
DOI :
10.1109/CLEO.2002.1034355
