Title :
Effect of Back-Etching on Electrical Properties of PZT thin films
Author :
Ohno, T. ; Matsuda, T. ; Kosec, M. ; Wakiya, N. ; Suzuki, H.
Author_Institution :
Kitami Inst. of Technol., Kitami
Abstract :
(lll)-oriented PZT(30/70) (PZT30) thin films were deposited on Pt/Ti/SiO2/Si substrate by Chemical Solution Deposition (CSD). The part of the Si substrates of 500 mum thickness were etched from back side by a wet chemical etching process. The depth of the back-etching was controlled by changing the etching time (residual Si; 25-180 mum). Dielectric and ferroelectric properties for the PZT30 thin films were measured at the back-etched and the un-etched part to clarify the effect of the residual stress on the electrical properties.
Keywords :
etching; ferroelectric thin films; internal stresses; lead compounds; liquid phase deposition; (111)-oriented PZT thin films; PZT; PZT thin films; Pt-Ti-SiO2-Si; Pt-Ti-SiO2-Si substrate; Si substrates; back-etching; chemical solution deposition; dielectric properties; electrical properties; etching time; ferroelectric properties; residual stress; wet chemical etching; Chemical processes; Dielectric measurements; Dielectric substrates; Dielectric thin films; Electric variables measurement; Ferroelectric materials; Semiconductor thin films; Sputtering; Transistors; Wet etching;
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2007.4393171
