Effect of Back-Etching on Electrical Properties of PZT thin films

Author

Ohno, T. ; Matsuda, T. ; Kosec, M. ; Wakiya, N. ; Suzuki, H.

Author_Institution

Kitami Inst. of Technol., Kitami

fYear

2007

fDate

27-31 May 2007

Firstpage

72

Lastpage

75

Abstract

(lll)-oriented PZT(30/70) (PZT30) thin films were deposited on Pt/Ti/SiO₂/Si substrate by Chemical Solution Deposition (CSD). The part of the Si substrates of 500 mum thickness were etched from back side by a wet chemical etching process. The depth of the back-etching was controlled by changing the etching time (residual Si; 25-180 mum). Dielectric and ferroelectric properties for the PZT30 thin films were measured at the back-etched and the un-etched part to clarify the effect of the residual stress on the electrical properties.

Keywords

etching; ferroelectric thin films; internal stresses; lead compounds; liquid phase deposition; (111)-oriented PZT thin films; PZT; PZT thin films; Pt-Ti-SiO₂-Si; Pt-Ti-SiO₂-Si substrate; Si substrates; back-etching; chemical solution deposition; dielectric properties; electrical properties; etching time; ferroelectric properties; residual stress; wet chemical etching; Chemical processes; Dielectric measurements; Dielectric substrates; Dielectric thin films; Electric variables measurement; Ferroelectric materials; Semiconductor thin films; Sputtering; Transistors; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Conference_Location

Nara

ISSN

1099-4734

Print_ISBN

978-1-4244-1334-8

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2007.4393171

Filename

4393171