Mismatch in photodiode and phototransistor arrays

Author

Kalayjian, Zaven K. ; Andreou, Andreas G.

Author_Institution

Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA

Volume

4

fYear

2000

fDate

2000

Firstpage

121

Abstract

We characterized photodetector mismatch in 2 μm and 1.2 μm CMOS processes. 32×32 element photodiode and phototransistor arrays were fabricated in each process, Light response measurements were made using a DC light source and neutral density filters. Dark currents were also measured and characterized. Our measurements reveal less than 2% mismatch for photodiodes over 4 orders of magnitude of intensity, and less than 5% mismatch for phototransistors. The oxide profile above the photodetector array is shown to be responsible for edge-effects

Keywords

CMOS analogue integrated circuits; VLSI; dark conductivity; elemental semiconductors; photodetectors; photodiodes; phototransistors; silicon; 1.2 micron; 2 micron; CMOS processes; DC light source; Si; dark currents; edge-effects; light response measurements; neutral density filters; oxide profile; photodetector mismatch; photodiode arrays; phototransistor arrays; CMOS process; Current measurement; Dark current; Density measurement; Filters; Light sources; Optical arrays; Photodetectors; Photodiodes; Phototransistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on

Conference_Location

Geneva

Print_ISBN

0-7803-5482-6

Type

conf

DOI

10.1109/ISCAS.2000.858703

Filename

858703