Title :
Gradient free sol-gel Pb(Zrx, Ti1-x)O3 thin films
Author :
Calame, F. ; Muralt, P.
Author_Institution :
Ecole Polytech. Fed. de Lausanne, Lausanne
Abstract :
Pb(Zrx,Ti1-x)O3 thin films of homogeneous composition were synthesized by means of a modified sol-gel route on Pt(111)/TiOx/SiO2/Si substrates. The usually observed gradient in B-site composition could be reduced from plusmn12 to plusmn2.5 at% amplitude in Zr concentration fluctuations. The obtained 2 mum thick, dense and crack free films exhibited a {100}-texture index of 98.4%. Grain diameters increased at the same time by 50%. Dielectric and piezoelectric properties were remarkably improved. The relative dielectric constant epsiv33f was obtained as 1620, and the remanent transverse piezoelectric coefficient e31f-was measured as -17.7 C/m2.
Keywords :
ferroelectric thin films; grain size; lead compounds; permittivity; piezoelectricity; sol-gel processing; substrates; B-site composition; PZT; Zr concentration fluctuation; crack free films; dielectric properties; ferroelectric thin films; gradient free sol-gel processing; grain diameters; piezoelectric properties; relative dielectric constant; remanent transverse piezoelectric coefficient; size 2 mum; substrates; texture index; Ceramics; Crystallization; Dielectric substrates; Laboratories; Piezoelectric films; Rapid thermal annealing; Rapid thermal processing; Semiconductor thin films; Sputtering; Zirconium;
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2007.4393173
