• DocumentCode
    227528
  • Title

    Floating zone growth and electricity properties of topological Kondo insulator SmB6

  • Author

    Xin Zhang ; Chaolong Liang ; Jiuxing Zhang ; Wei Liu

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Beijing Univ. of Technol., Beijing, China
  • fYear
    2014
  • fDate
    June 30 2014-July 4 2014
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Samarium hexaboride (SmB6) predicted to be a topological Kondo insulator, is the first strongly correlated heavy fermion material to exhibit topological surface states. In this work, the high quality SmB6 single crystal have been successfully grown by the floating zone method and the electrical transport at low temperature was measured at Oxford Instruments Heliox VL. The results show that the electrical resistivity displays a sharp increase below 20 K, which value is about 105 higher than that of room temperature. And the Hall resistivity, which is linear, yielding an n-type carrier concentration as indicated (low T regime).
  • Keywords
    Hall effect; Kondo effect; boron alloys; carrier density; electrical resistivity; heavy fermion systems; samarium alloys; strongly correlated electron systems; surface states; topological insulators; zone melting; Hall resistivity; Oxford Instruments Heliox VL; SmB6; electrical resistivity; electrical transport; electricity properties; floating zone growth; high quality SmB6 single crystal; low T regime; n-type carrier concentration; samarium hexaboride; strongly correlated heavy fermion material; topological Kondo insulator; topological surface states; Conductivity; Crystals; Educational institutions; Temperature measurement; Topological insulators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Electron Sources Conference (IVESC), 2014 Tenth International
  • Conference_Location
    St. Petersburg
  • Print_ISBN
    978-1-4799-5770-5
  • Type

    conf

  • DOI
    10.1109/IVESC.2014.6892107
  • Filename
    6892107