DocumentCode :
227528
Title :
Floating zone growth and electricity properties of topological Kondo insulator SmB6
Author :
Xin Zhang ; Chaolong Liang ; Jiuxing Zhang ; Wei Liu
Author_Institution :
Dept. of Mater. Sci. & Eng., Beijing Univ. of Technol., Beijing, China
fYear :
2014
fDate :
June 30 2014-July 4 2014
Firstpage :
1
Lastpage :
1
Abstract :
Samarium hexaboride (SmB6) predicted to be a topological Kondo insulator, is the first strongly correlated heavy fermion material to exhibit topological surface states. In this work, the high quality SmB6 single crystal have been successfully grown by the floating zone method and the electrical transport at low temperature was measured at Oxford Instruments Heliox VL. The results show that the electrical resistivity displays a sharp increase below 20 K, which value is about 105 higher than that of room temperature. And the Hall resistivity, which is linear, yielding an n-type carrier concentration as indicated (low T regime).
Keywords :
Hall effect; Kondo effect; boron alloys; carrier density; electrical resistivity; heavy fermion systems; samarium alloys; strongly correlated electron systems; surface states; topological insulators; zone melting; Hall resistivity; Oxford Instruments Heliox VL; SmB6; electrical resistivity; electrical transport; electricity properties; floating zone growth; high quality SmB6 single crystal; low T regime; n-type carrier concentration; samarium hexaboride; strongly correlated heavy fermion material; topological Kondo insulator; topological surface states; Conductivity; Crystals; Educational institutions; Temperature measurement; Topological insulators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Electron Sources Conference (IVESC), 2014 Tenth International
Conference_Location :
St. Petersburg
Print_ISBN :
978-1-4799-5770-5
Type :
conf
DOI :
10.1109/IVESC.2014.6892107
Filename :
6892107
Link To Document :
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