Title :
Epitaxial growth and properties of NiSiGe
Author :
Zhang, Bo ; Yu, Wenjie ; Zhao, Qingtai ; Mussler, Gregor ; Buca, Dan ; Holländer, Bernhard ; Mantl, Siegfried ; Zhang, Miao
Author_Institution :
State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
Abstract :
Epitaxial growth of Ni germanosilicide on relaxed SiGe (30% Ge content) substrate has been achieved by using 3 nm Al interlayer. This epitaxial layer shows a very good uniformity and smooth interface and surface. The epitaxial layer and the SiGe substrate match very well and no misfit dislocation is found at the interface.
Keywords :
Ge-Si alloys; chemical vapour deposition; epitaxial growth; nickel compounds; semiconductor epitaxial layers; semiconductor materials; silicon compounds; Al interlayer; Ni germanosilicide; NiSiGe; SiGe; SiGe substrate; chemical vapor deposition; epitaxial growth; epitaxial layer; size 3 nm; smooth interface; Abstracts; Annealing; Epitaxial growth; Germanium silicon alloys; Nickel; Silicon germanium;
Conference_Titel :
Junction Technology (IWJT), 2012 12th International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-1258-5
Electronic_ISBN :
978-1-4673-1256-1
DOI :
10.1109/IWJT.2012.6212841
