Junction strategies for 1x nm technology node with FINFET and high mobility channel

Junction strategies for FINFETs and high mobility channel devices in 1× nm node are discussed. Doping conformality and doping damage control are the keys for high performance scaled FINFETs. Damage-less conformal fin doping can be provided by Self Regulatory Plasma Doping (SRPD) process, based on radical absorption in low energy plasma and subsequent drive-in anneal. SRPD demonstrates 20% I_on gain as compared to an ion implantation reference. The Implant Free Quantum Well (IFQW) device, featuring high mobility QW channel and doped epi raised Source/Drain (rSD), is one of the most promising device architectures for high mobility channel devices. Carrier confinement in QW channel enables good short channel control without halo, which in turn leads to reduced variability. Doped epi rSD enables low temperature junction anneal that maintains high channel mobility. SiGe IFQW device with eSiGe epi SD shows very high I_on of 1.28mA/μm at I_off = 160nA/μm at gate length/width of 30nm/0.16μm.