Title :
Preparation and characterization of Bi-perovskite oxide films for piezo applications
Author :
Yasui, Shintaro ; Naganuma, Hiroshi ; Okamura, Soichiro ; Iijima, Takashi ; Nishida, Ken ; Katoda, Takashi ; Uchida, Hiroshi ; Koda, Seiichiro ; Funakubo, Hiroshi
Author_Institution :
Tokyo Inst. of Technol., Yokohama
Abstract :
Thin films of BiFeO30-BiScO3 (BFO-BSO) solid-solution were fabricated for improving electrical resistivity of BiFeO3-based films by replacing electrically-unstable Fe3+ for stable Sc3+. The films with chemical composition of Bi(Fe1-x, Scx)O3 were fabricated on (111)Pt/TiO2/SiO2/(100)Si by chemical solution deposition technique. Single phase of perovskite was obtained in the range of x = 0-0.3, where selective replacement of Fe3+ and Sc3+ was confirmed by Raman measurement. The leakage current density of BFO-BSO film was reduced by increasing x. Well-saturated polarization -electric field hysteresis loop was obtained for BFO-BSO film with x = 0.15.
Keywords :
Raman spectra; bismuth compounds; crystal structure; dielectric hysteresis; dielectric polarisation; dielectric thin films; electrical resistivity; leakage currents; liquid phase epitaxial growth; BiFeO3-BiScO3; Pt-TiO2-SiO2-Si; Raman measurement; Si; chemical composition; chemical solution deposition technique; crystal structure; electric field hysteresis loop; electrical resistivity; leakage current density; perovskite oxide films; piezo applications; polarization; Chemical technology; Electronics industry; Ferroelectric films; Ferroelectric materials; Leakage current; Material storage; Materials science and technology; Piezoelectric films; Textile industry; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2007.4393180
