Chemical Solution Processing and Properties of (Bi1/2Na1/2)TiO3 Thin Films

Author

Hayashi, Takashi ; Kogure, Tomonori ; Sakamoto, Wataru

Author_Institution

Shonan Inst. of Technol., Fujisawa

fYear

2007

fDate

27-31 May 2007

Firstpage

104

Lastpage

105

Abstract

(Bi_1/2Na_1/2)TiO₃ (BNT) thin films were prepared on Pt/TiO_x/SiO₂/Si substrates by chemical solution deposition (CSD). BNT precursor thin films crystallized in the perovskite BNT phase above 650degC with a random orientation. The synthesized BNT thin films showed typical ferroelectric P-E hysteresis and field-induced strain loops. The P_r and E_c values of the 700degC-annealed BNT thin films were approximately 15 muC/cm and 160 kV/cm, respectively.

Keywords

barium compounds; crystallisation; dielectric thin films; ferroelectric thin films; liquid phase deposition; sodium compounds; (Bi_1.5Na_1.5)TiO₃; Pt-TiO_x-SiO₂-Si; annealing; chemical solution deposition; crystallization; ferroelectric P-E hysteresis; field-induced strain loops; perovskite BNT phase; temperature 650 degC; temperature 700 degC; thin films; Bismuth; Chemical processes; Crystallization; Ferroelectric films; Ferroelectric materials; Piezoelectric films; Semiconductor thin films; Sputtering; Substrates; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Conference_Location

Nara

ISSN

1099-4734

Print_ISBN

978-1-4244-1334-8

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2007.4393181

Filename

4393181