DocumentCode :
2275405
Title :
Chemical Solution Processing and Properties of (Bi1/2Na1/2)TiO3 Thin Films
Author :
Hayashi, Takashi ; Kogure, Tomonori ; Sakamoto, Wataru
Author_Institution :
Shonan Inst. of Technol., Fujisawa
fYear :
2007
fDate :
27-31 May 2007
Firstpage :
104
Lastpage :
105
Abstract :
(Bi1/2Na1/2)TiO3 (BNT) thin films were prepared on Pt/TiOx/SiO2/Si substrates by chemical solution deposition (CSD). BNT precursor thin films crystallized in the perovskite BNT phase above 650degC with a random orientation. The synthesized BNT thin films showed typical ferroelectric P-E hysteresis and field-induced strain loops. The Pr and Ec values of the 700degC-annealed BNT thin films were approximately 15 muC/cm and 160 kV/cm, respectively.
Keywords :
barium compounds; crystallisation; dielectric thin films; ferroelectric thin films; liquid phase deposition; sodium compounds; (Bi1.5Na1.5)TiO3; Pt-TiOx-SiO2-Si; annealing; chemical solution deposition; crystallization; ferroelectric P-E hysteresis; field-induced strain loops; perovskite BNT phase; temperature 650 degC; temperature 700 degC; thin films; Bismuth; Chemical processes; Crystallization; Ferroelectric films; Ferroelectric materials; Piezoelectric films; Semiconductor thin films; Sputtering; Substrates; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
ISSN :
1099-4734
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
Type :
conf
DOI :
10.1109/ISAF.2007.4393181
Filename :
4393181
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2275405
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