DocumentCode
2275477
Title
High-power single-mode AlGaAs distributed-feedback diode lasers emitting at 862 nm
Author
Wenzel, Hans ; Braun, Martin ; Fricke, J. ; Klehr, Andreas ; Knauer, A. ; Ressel, P. ; Sebastian, J. ; Erbert, Gotz
Author_Institution
Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany
fYear
2002
fDate
24-24 May 2002
Abstract
Summary form only given. We present DFB lasers emitting at 862 nm in a single transverse and longitudinal mode up to 300 mW. The active layer consists of an InGaAs quantum well sandwiched between GaAsP spacers and AlGaAs waveguide and cladding layers.
Keywords
distributed feedback lasers; gallium arsenide; indium compounds; infrared sources; laser modes; laser transitions; quantum well lasers; ridge waveguides; waveguide lasers; 300 mW; 862 nm; AlGaAs; AlGaAs waveguide; DFB lasers; GaAsP; GaAsP spacers; InGaAs; InGaAs quantum well lasers; active layer; cladding layers; high-power single-mode AlGaAs distributed-feedback diode lasers; longitudinal laser mode; single transverse mode; Diode lasers; Distributed Bragg reflectors; Distributed feedback devices; Holographic optical components; Holography; Laser feedback; Laser modes; Optical waveguides; Power generation; Power lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Long Beach, CA, USA
Print_ISBN
1-55752-706-7
Type
conf
DOI
10.1109/CLEO.2002.1034368
Filename
1034368
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