Title :
High-power single-mode AlGaAs distributed-feedback diode lasers emitting at 862 nm
Author :
Wenzel, Hans ; Braun, Martin ; Fricke, J. ; Klehr, Andreas ; Knauer, A. ; Ressel, P. ; Sebastian, J. ; Erbert, Gotz
Author_Institution :
Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany
Abstract :
Summary form only given. We present DFB lasers emitting at 862 nm in a single transverse and longitudinal mode up to 300 mW. The active layer consists of an InGaAs quantum well sandwiched between GaAsP spacers and AlGaAs waveguide and cladding layers.
Keywords :
distributed feedback lasers; gallium arsenide; indium compounds; infrared sources; laser modes; laser transitions; quantum well lasers; ridge waveguides; waveguide lasers; 300 mW; 862 nm; AlGaAs; AlGaAs waveguide; DFB lasers; GaAsP; GaAsP spacers; InGaAs; InGaAs quantum well lasers; active layer; cladding layers; high-power single-mode AlGaAs distributed-feedback diode lasers; longitudinal laser mode; single transverse mode; Diode lasers; Distributed Bragg reflectors; Distributed feedback devices; Holographic optical components; Holography; Laser feedback; Laser modes; Optical waveguides; Power generation; Power lasers;
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
DOI :
10.1109/CLEO.2002.1034368
