Title :
735-nm tapered diode lasers with nearly diffraction-limited beam properties at P = 2 W
Author :
Sumpf, B. ; Dzionk, C. ; Fricke, J. ; Hulsewede, R. ; Knauer, A. ; Pittroff, W. ; Ressel, P. ; Sahre, S. ; Sebastian, J. ; Wenzel, H. ; Erbert, G. ; Trankle, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany
Abstract :
Summary from only given. Tapered diode lasers optimized for /spl lambda/ = 735 nm will be presented. For the tapered lasers tensile-strained GaAsP quantum wells embedded in AlGaAs were applied which ensures high reliability. Examples for applications are photodynamic therapy (PDT) and pumping of solid-state lasers.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; laser applications in medicine; laser beams; laser reliability; light diffraction; optical pumping; photodynamic therapy; semiconductor device reliability; semiconductor lasers; 2 W; 735 nm; AlGaAs; GaAsP; high reliability; nearly diffraction-limited beam properties; photodynamic therapy; solid-state laser pumping; tapered diode lasers; tensile-strained GaAsP quantum well lasers; Autocorrelation; Diffraction; Diode lasers; Laser mode locking; Mirrors; Optical pulses; Optical pumping; Pump lasers; Semiconductor lasers; Surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
DOI :
10.1109/CLEO.2002.1034370
