Quasi-3D optoelectronic modelling of 730 nm tapered laser diodes

Summary from only given. For the design and optimisation of laser structures predictive models are needed. Previous models which have the potential to reproduce results have been obtained experimentally. However the accuracy and generality of these models are limited by the use of the paraxial approximation in the beam propagation algorithms and reliance on a phenomenological electronic model based on 1D lateral carrier diffusion in the active region. In the laser model presented in this paper, both limitations have been addressed. The simulation results are shown to agree well with experiment. The model solves consistently the optical, electrical and thermal equations for tapered lasers, taking into account the carrier and temperature induced refractive index changes.