Title :
Spatially-resolved spectroscopic strain measurements at high-power diode laser bars
Author :
Tomm, J.W. ; Gerhardt, A. ; Landesman, J.-P. ; Galtier, P. ; Sainte-Marie, Y. ; Nagle, J.
Author_Institution :
Max-Born-Inst. fur Nichtlineare Opt. und Kurzzeitspektroskopie, Berlin, Germany
Abstract :
Summary form only given. Device packaging involves the potential of introduction of mechanical strain and defects into semiconductor laser chips and bars. The first step on the road towards advanced packaging techniques must be the analysis how packaging affects the chips. Thus strain and defects within the laser structures must become surely measurable and detectable, respectively. One way to access these parameters is to investigate strain-induced modifications of the semiconductor bandstructure by micro-photoluminescence ( /spl mu/PL) spectroscopy or photocurrent (PC) spectroscopy. We discuss the potential of these methods on the basis of experiments where both methods are applied to the same 840 nm emitting AlGaAs/GaAs high-power laser diode bar structures.
Keywords :
III-V semiconductors; aluminium compounds; band structure; gallium arsenide; optical testing; photoconductivity; photoluminescence; semiconductor device packaging; semiconductor device testing; semiconductor lasers; 840 nm; AlGaAs-GaAs; AlGaAs/GaAs high-power laser diode bar; advanced packaging techniques; defects; device packaging; laser structures; mechanical strain; micro-photoluminescence spectroscopy; photocurrent spectroscopy; semiconductor bandstructure; semiconductor laser bars; semiconductor laser chips; strain-induced modifications; Bars; Capacitive sensors; Diode lasers; Photoconductivity; Roads; Semiconductor device measurement; Semiconductor device packaging; Semiconductor lasers; Spectroscopy; Strain measurement;
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
DOI :
10.1109/CLEO.2002.1034372
