Short-channel characteristics of self-aligned dual-channel source/drain-tied MOSFETs

In this paper, we present a simulation study of short-channel characteristics of self-aligned dual-channel source/drain-tied (SA-DCSDT) MOSFETs. Two compared devices are designed, namely, the normal SA-DCSDT MOSFET and the ultimate SA-DCSDT MOSFET. According to simulation results, the DC is used to obtain a high drain saturation current, the SDT is used to get improved thermal stability, and the BOX under S/D regions is used to reduce the drain off-state current. A physical explanation for these results is also presented.