Title :
Hole mobility enhancement of quantum-well p-MOSFETs on sSi/sSi0.5Ge0.5/sSOI heterostructure
Author :
Yu, W. ; Zhang, B. ; Zhao, Q.T. ; Buca, D. ; Wang, X. ; Mantl, S.
Author_Institution :
State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
Abstract :
Strained silicon germanium (sSiGe), as channel materials, has received a lot of attention due to its high hole mobility [1]-[4]. sSi/sSiGe/sSOI heterostructure substrate [5]-[8] takes the advantages of the tensile strained Si layer, and thus can increase the critical thickness for pseudomorphically grown SiGe with high Ge concentration. In this work, QW p-MOSFETs [9]-[11] on sSi/sSi0.5Ge0.5/sSOI substrate were characterized and hole mobility was extracted, compared with QW p-MOSFETs on Si/sSi0.5Ge0.5/SOI substrate.
Keywords :
Ge-Si alloys; MOSFET; hole mobility; quantum well devices; silicon-on-insulator; Si-SiGe; critical thickness; heterostructure substrate; hole mobility enhancement; quantum-well p-MOSFET; strained silicon germanium; Abstracts; Capacitance; Logic gates; MOSFET circuits; Silicon; Substrates; Tin;
Conference_Titel :
Junction Technology (IWJT), 2012 12th International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-1258-5
Electronic_ISBN :
978-1-4673-1256-1
DOI :
10.1109/IWJT.2012.6212851
