Title :
Seeding effect of SrBi2Ta2xO9 thin buffer layer on crystallization and electric properties of SrBi2Ta2O9 thin films
Author :
Hsu, F.Y. ; Leu, C.C. ; Chien, C.H. ; Hu, C.T.
Author_Institution :
Nat. Tsing Hua Univ., Hsinchu
Abstract :
The seeding effects of the pre-crystallized (RTP 750degC 30 s) thin buffer layer, SrBi2Ta2xO9 (SBT, x=0.9, 1.0, and 1.1), regarding the structure, the morphology and the ferroelectric properties of the SrBi2Ta2O9 ferroelectric thin films on top of buffer layer, have been investigated. X-ray diffraction patterns revealed that the crystallinity of SrBi2Ta2O9 thin films were significant influenced by the buffer layers with various Ta contents. By adding a Ta deficient buffer layer, the preferred polar alpha-axis orientation and the uniformity of grain size within the SBT thin films were promoted. Meanwhile, the optimized ferroelectric properties were achieved from the SrBi2Ta1.8O9 buffered SrBi2Ta2O9 thin film, with maximum 2Pr values about 19.7 mu C/cm2, which was almost 93% greater than that of specimen with the stoichiometric buffered one.
Keywords :
X-ray diffraction; bismuth compounds; buffer layers; crystal morphology; crystal orientation; crystal structure; crystallisation; ferroelectric materials; ferroelectric thin films; grain size; stoichiometry; strontium compounds; SrBi2TaO9; X-ray diffraction; crystallization; ferroelectric properties; ferroelectric thin films; grain size; morphology; polar a-axis orientation; seeding effect; stoichiometric buffer; structure; thin buffer layer; Annealing; Buffer layers; Crystalline materials; Crystallization; Ferroelectric films; Ferroelectric materials; Microstructure; Morphology; Transistors; X-ray diffraction;
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2007.4393187
