DocumentCode
2275593
Title
Precision measurement of the FQHE resistance at filling factor 1/3
Author
Ahlers, F.J. ; Pesel, E. ; Pierz, K. ; Warnecke, P. ; Wegscheider, W.
Author_Institution
Phys.-Tech. Bundesanstalt, Braunschweig
fYear
2008
fDate
8-13 June 2008
Firstpage
16
Lastpage
17
Abstract
A precision measurement of the fractional quantized Hall resistance in a high mobility two-dimensional electron system was carried out as a test of the universality of the quantum Hall effect. Our results indicate that the Hall resistance at filling factor nu=1/3 does not deviate from the theoretical value 3ldrh/e2 within a relative uncertainty of plusmn3.3 parts in 108 (k=2).
Keywords
electric resistance measurement; quantum Hall effect; two-dimensional electron gas; filling factor; fractional quantized Hall resistance measurement; high mobility two-dimensional electron system; relative uncertainty; Crystalline materials; Density measurement; Electrical resistance measurement; Electron mobility; Filling; Gallium arsenide; Hall effect; Measurement standards; Temperature; Uncertainty;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements Digest, 2008. CPEM 2008. Conference on
Conference_Location
Broomfield, CO
Print_ISBN
978-1-4244-2399-6
Electronic_ISBN
978-1-4244-2400-9
Type
conf
DOI
10.1109/CPEM.2008.4574630
Filename
4574630
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