Title :
Sol-Gel Derived (Bi,La)4Ti3O12 Thin Films with Surface Treatment before Crystallization Annealing
Author :
Tokumitsu, E. ; Sugita, N. ; Boku, S. ; Aoki, T. ; Tani, T.
Author_Institution :
Tokyo Inst. of Technol., Yokohama
Abstract :
Ferroelectric (Bi,La)4Ti3O12 films have been fabricated by the sol-gel process with "surface treatment" which is carried out before the crystallization annealing. Two kinds of surface treatment have been examined; one is plasma treatment and the other is deposition of thin Bi4Ti3O12, (Bi,Pr)4Ti3O12, or (Bi,Nd)4Ti3O12 layer. It is demonstrated that the growth of c-axis oriented crystallite of BLT films can be suppressed by such treatments and that the remanent polarization of BLT films is larger than that of the BLT film without such surface treatments. In addition, a possible growth mechanism is discussed.
Keywords :
bismuth compounds; crystallisation; dielectric hysteresis; ferroelectric thin films; plasma materials processing; recrystallisation annealing; sol-gel processing; surface treatment; (BiLa)4Ti3O12; (BiNd)4Ti3O12; (BiPr)4Ti3O12; BLT films; Bi4Ti3O12; c-axis oriented crystallite; crystallization annealing; ferroelectric thin films; growth mechanism; plasma treatment; remanent polarization; sol-gel processing; surface treatment; thin layer deposition; Annealing; Crystallization; Ferroelectric films; Ferroelectric materials; Plasma simulation; Plasma temperature; Plasma x-ray sources; Polarization; Surface treatment; X-ray scattering;
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2007.4393189
