Sol-Gel Derived (Bi,La)4Ti3O12 Thin Films with Surface Treatment before Crystallization Annealing

Author

Tokumitsu, E. ; Sugita, N. ; Boku, S. ; Aoki, T. ; Tani, T.

Author_Institution

Tokyo Inst. of Technol., Yokohama

fYear

2007

fDate

27-31 May 2007

Firstpage

122

Lastpage

125

Abstract

Ferroelectric (Bi,La)₄Ti₃O₁₂ films have been fabricated by the sol-gel process with "surface treatment" which is carried out before the crystallization annealing. Two kinds of surface treatment have been examined; one is plasma treatment and the other is deposition of thin Bi₄Ti₃O₁₂, (Bi,Pr)₄Ti₃O₁₂, or (Bi,Nd)₄Ti₃O₁₂ layer. It is demonstrated that the growth of c-axis oriented crystallite of BLT films can be suppressed by such treatments and that the remanent polarization of BLT films is larger than that of the BLT film without such surface treatments. In addition, a possible growth mechanism is discussed.

Keywords

bismuth compounds; crystallisation; dielectric hysteresis; ferroelectric thin films; plasma materials processing; recrystallisation annealing; sol-gel processing; surface treatment; (BiLa)₄Ti₃O₁₂; (BiNd)₄Ti₃O₁₂; (BiPr)₄Ti₃O₁₂; BLT films; Bi₄Ti₃O₁₂; c-axis oriented crystallite; crystallization annealing; ferroelectric thin films; growth mechanism; plasma treatment; remanent polarization; sol-gel processing; surface treatment; thin layer deposition; Annealing; Crystallization; Ferroelectric films; Ferroelectric materials; Plasma simulation; Plasma temperature; Plasma x-ray sources; Polarization; Surface treatment; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Conference_Location

Nara

ISSN

1099-4734

Print_ISBN

978-1-4244-1334-8

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2007.4393189

Filename

4393189