Title :
Asymmetric double 2DEGs As a basis of quantum hall resistance standards
Author :
Pierz, K. ; Hein, G. ; Schumacher, B. ; Pesel, E. ; Schumacher, H.W.
Author_Institution :
Phys.-Tech. Bundesanstalt PTB, Braunschweig
Abstract :
We study growth and magnetotransport properties of Ga(Al)As based asymmetric double two-dimensional electron gases (2DEG) consisting of a quantum well stacked on top of a heterojunction. We show that the electron densities of the two parallel 2DEG channels can be reliably matched by variation of a single growth parameter. Metrological quality of the resistance quantization of the two parallel quantum Hall channels at filling factor 2 is demonstrated.
Keywords :
III-V semiconductors; electric resistance measurement; electron density; gallium arsenide; gallium compounds; galvanomagnetic effects; measurement standards; molecular beam epitaxial growth; quantum Hall effect; semiconductor growth; semiconductor quantum wells; two-dimensional electron gas; asymmetric double 2DEG; asymmetric double two-dimensional electron gases; electron densities; heterojunction; magnetotransport properties; quantum Hall resistance standards; quantum well; resistance quantization; Bars; Doping; Electrons; Filling; Gallium arsenide; Gases; Heterojunctions; Magnetic properties; Magnetosphere; Quantization;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 2008. CPEM 2008. Conference on
Conference_Location :
Broomfield, CO
Print_ISBN :
978-1-4244-2399-6
Electronic_ISBN :
978-1-4244-2400-9
DOI :
10.1109/CPEM.2008.4574631
