Title :
Sizing of MOS transistors for amplifier design
Author :
Pinto, R. L Oliveirn ; Schneider, M.C. ; Montoro, C.G.
Author_Institution :
Univ. Fed. de Santa Catarina, Florianapolis, Brazil
Abstract :
This paper presents a design procedure for amplifiers based on a universal model of the MOSFET, valid from weak to strong inversion. A set of very simple expressions allows quick design by hand as well as an evaluation of the design in terms of power consumption and silicon real estate. It is shown that there is an optimum bias in moderate inversion for which the attainable DC gain is maximum. The design and measurements of a common-source amplifier illustrate the appropriateness of the proposed methodology
Keywords :
CMOS analogue integrated circuits; MOSFET; amplifiers; capacitance; integrated circuit design; semiconductor device models; MOS transistor sizing; MOSFET universal model; amplifier design; common-source amplifier; design procedure; maximum DC gain; optimum bias; power consumption; silicon real estate; Analog circuits; Differential amplifiers; Electronic mail; Energy consumption; Equations; Frequency; MOSFET circuits; Operational amplifiers; Silicon; Voltage;
Conference_Titel :
Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on
Conference_Location :
Geneva
Print_ISBN :
0-7803-5482-6
DOI :
10.1109/ISCAS.2000.858719
