Title :
Reproducibility of the quantum hall effect in GaAs/AlGaAs two dimensional electron gas
Author :
Schopfer, F. ; Poirier, W.
Author_Institution :
Lab. Nat. de Metrol. et d´´Essais, Trappes
Abstract :
This paper describes an experiment which shows that the integer quantum Hall effect implemented in GaAs/AIGaAs Hall bars mounted as a Wheatstone bridge is reproducible with a relative uncertainty of less than 4 parts in 1011.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; quantum Hall effect; semiconductor heterojunctions; two-dimensional electron gas; 2D electron gas; GaAs-AlGaAs; Hall bars; Wheatstone bridge; quantum hall effect; Bars; Bridge circuits; Electrons; Gallium arsenide; Hall effect; Physics; Reproducibility of results; SQUIDs; Uncertainty; Voltage;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 2008. CPEM 2008. Conference on
Conference_Location :
Broomfield, CO
Print_ISBN :
978-1-4244-2399-6
Electronic_ISBN :
978-1-4244-2400-9
DOI :
10.1109/CPEM.2008.4574633
