Title :
High power density and large voltage swing of enhancement-mode Al 0.5Ga0.5As/InGaAs pHEMTs for 3.5 V L-band applications
Author :
Chiu, Hsien-Chin ; Yang, Shih-Cheng ; Chan, Yi-Jen
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-li, Taiwan
Abstract :
High power density and large voltage swing Al0.5Ga0.5As/InGaAs enhancement-mode pHEMTs operating under Vds = 3.5 V for L-band application have been developed. In the study, we improve the current density and the gate voltage operation region of the devices by increasing the Al mole fraction of AlxGa1-xAs to x = 0.5. The developed 1.0 μm long and 1 mm width gate FETs exhibit a Vth = +0.24 V and an Imax of 286 mA/mm. The maximum output power at 1.9 GHz operation is 95 mW/mm, with a linear power gain of 18.7 dB, and a power-added efficiency of 60 %. These characteristics demonstrate the great potential of E-pHEMTs for high power microwave device applications
Keywords :
III-V semiconductors; UHF field effect transistors; aluminium compounds; current density; gallium arsenide; indium compounds; microwave power transistors; power HEMT; semiconductor device measurement; 1 mm; 1.0 micron; 1.9 GHz; 18.7 dB; 3.5 V; 3.5 V L-band applications; 60 percent; Al mole fraction; Al0.5Ga0.5As-InGaAs; current density; enhancement-mode Al0.5Ga0.5As/InGaAs pHEMTs; gate voltage operation region; high power density; high power microwave device applications; large voltage swing; linear power gain; maximum output power; power-added efficiency; Breakdown voltage; Current density; Electrons; Fabrication; Gallium arsenide; Gold; Indium gallium arsenide; L-band; Microwave devices; PHEMTs;
Conference_Titel :
Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
Conference_Location :
Taipei
Print_ISBN :
0-7803-7138-0
DOI :
10.1109/APMC.2001.985349
