DocumentCode :
2275705
Title :
Thin Film Formations of Ferroelectric Material Bi3Nd1Ti3O12 (BNT), High-k Materials SrTiO3 (STO) and Nb-doped SrTiO3(Nb-STO) by Newly Developed MOCVD System
Author :
Toda, M. ; Sasaki, Y. ; Kurihashi, Y. ; Umeda, M. ; Fukagawa, Misato ; Tamura, M. ; Kosugi, Y. ; Kusuhara, M.
Author_Institution :
Yamagata Univ., Yamagata
fYear :
2007
fDate :
27-31 May 2007
Firstpage :
142
Lastpage :
145
Abstract :
The mass production system of MOCVD, which has the originally designed vaporizer and liquid source delivery system, has been developed for FeRAM-LSI, DRAM-LSI and so on. In this work, the thin film formations of ferroelectric materials Bi3Nd1Ti3O12 (BNT), high-k materials SrTiO3 (STO) and Nb-doped SrTiO3(Nb-STO) by newly developed MOCVD system were extensively examined.
Keywords :
MOCVD; bismuth compounds; doping; ferroelectric thin films; high-k dielectric thin films; neodymium compounds; niobium; strontium compounds; Bi3NdTi3O12; DRAM-LSI; FeRAM-LSI; MOCVD; Nb-doped STO; SrTiO3; SrTiO3:Nb; ferroelectric thin film formation; high-k dielectric materials; liquid source delivery system; mass production system; vaporizer; Bismuth; Chemical engineering; Ferroelectric materials; High K dielectric materials; High-K gate dielectrics; MOCVD; Organic compounds; Temperature; Titanium; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
ISSN :
1099-4734
Print_ISBN :
978-1-4244-1333-1
Type :
conf
DOI :
10.1109/ISAF.2007.4393195
Filename :
4393195
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2275705
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