Thin Film Formations of Ferroelectric Material Bi3Nd1Ti3O12 (BNT), High-k Materials SrTiO3 (STO) and Nb-doped SrTiO3(Nb-STO) by Newly Developed MOCVD System

Author

Toda, M. ; Sasaki, Y. ; Kurihashi, Y. ; Umeda, M. ; Fukagawa, Misato ; Tamura, M. ; Kosugi, Y. ; Kusuhara, M.

Author_Institution

Yamagata Univ., Yamagata

fYear

2007

fDate

27-31 May 2007

Firstpage

142

Lastpage

145

Abstract

The mass production system of MOCVD, which has the originally designed vaporizer and liquid source delivery system, has been developed for FeRAM-LSI, DRAM-LSI and so on. In this work, the thin film formations of ferroelectric materials Bi₃Nd₁Ti₃O₁₂ (BNT), high-k materials SrTiO₃ (STO) and Nb-doped SrTiO₃(Nb-STO) by newly developed MOCVD system were extensively examined.

Keywords

MOCVD; bismuth compounds; doping; ferroelectric thin films; high-k dielectric thin films; neodymium compounds; niobium; strontium compounds; Bi₃NdTi₃O₁₂; DRAM-LSI; FeRAM-LSI; MOCVD; Nb-doped STO; SrTiO₃; SrTiO₃:Nb; ferroelectric thin film formation; high-k dielectric materials; liquid source delivery system; mass production system; vaporizer; Bismuth; Chemical engineering; Ferroelectric materials; High K dielectric materials; High-K gate dielectrics; MOCVD; Organic compounds; Temperature; Titanium; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Conference_Location

Nara

ISSN

1099-4734

Print_ISBN

978-1-4244-1333-1

Type

conf

DOI

10.1109/ISAF.2007.4393195

Filename

4393195