Atomic Layer Deposition of Ru Thin Films Using 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl) Ru by a Liquid Injection System

Author

Kim, Seong Keun ; Lee, Sang Young ; Lee, Sang Woon ; Hwang, Cheol Seong

Author_Institution

Inter-Univ. Semicond. Res. Center, Seoul

fYear

2007

fDate

27-31 May 2007

Firstpage

163

Lastpage

166

Abstract

Ru thin films were grown on TiO₂/Si and bare-Si substrates by atomic-layer-deposition using 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl)Ru and O₂ as Ru precursor and reactant, respectively. Negligible RuO₂ was formed even with an excessive oxygen dose. Ru films on TiO₂/Si substrate showed smoother surface morphology compared to Ru films on bare-Si substrate. Although abnormal grain growth of Ru films appeared at annealing temperature > 700degC, agglomeration of Ru films was not observed. Al-incorporated TiO₂ (ATO) films were grown on Ru films and the electrical properties of the capacitor were investigated in order to evaluate the properties of bottom Ru films. The leakage current density of an ATO film with an equivalent oxide thickness of 0.7 nm was 10^-7 A/cm² at + 1 V. Therefore, Ru films grown by ALD are very promising as the capacitor electrodes of future dynamic random access memories.

Keywords

DRAM chips; annealing; atomic layer deposition; capacitors; current density; leakage currents; metallic thin films; ruthenium; surface morphology; 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl)Ru; Ru-Si; Ru-TiO₂-Si; Si; TiO₂-Si; agglomeration; annealing; atomic layer deposition; capacitor electrodes; dynamic random access memories; electrical properties; leakage current density; liquid injection system; surface morphology; thin films; Annealing; Atomic layer deposition; Capacitors; Leakage current; Semiconductor films; Semiconductor thin films; Sputtering; Substrates; Surface morphology; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Conference_Location

Nara

ISSN

1099-4734

Print_ISBN

978-1-4244-1334-8

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2007.4393201

Filename

4393201