Influence of in-situ surface treatment of Ir electrode before metal-organic chemical vapor deposition of Pb(Zr0.2, Ti0.8)O3 thin films in the self-regulation window

Author

Lee, Keun ; Lee, Hyun Ju ; Kim, Gun Hwan ; Hwang, Cheol Seong

Author_Institution

Inter-Univ. Semicond. Res. Center, Seoul

fYear

2007

fDate

27-31 May 2007

Firstpage

172

Lastpage

175

Abstract

The influence of in-situ surface treatment of Ir electrode before metal-organic chemical vapor deposition of Pb(Zr_0.2,Ti_0.8)O₃ (PZT) thin films on the self-regulation process window [constant Pb concentration in the film irrespective of the precursor input ratio (Pb/(Zr+Ti)] was investigated. The effect of the various process parameteres, such as the pre-treatment of Ir electrode, susceptor and chamber wall cleaning, and total precursor flow rate on the self-regulation window was investigated. Prevention of iridium oxide formation by Ar pre-treatment was crucial to improve ferroelectric performances of PZT films within the self-regulation process window.

Keywords

MOCVD; electrodes; ferroelectric thin films; iridium; lead compounds; surface morphology; surface roughness; surface treatment; Ir; PZT; PZT thin films; PbZr_0.2Ti_0.8O₃; electrode; ferroelectric film; ferroelectric performance; metal-organic chemical vapor deposition; precursor flow rate; self-regulation window; surface morphology; surface roughness; surface treatment; Argon; Chemical vapor deposition; Electrodes; Ferroelectric films; MOCVD; Random access memory; Semiconductor films; Sputtering; Strontium; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Conference_Location

Nara

ISSN

1099-4734

Print_ISBN

978-1-4244-1334-8

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2007.4393204

Filename

4393204