Title :
Influence of in-situ surface treatment of Ir electrode before metal-organic chemical vapor deposition of Pb(Zr0.2, Ti0.8)O3 thin films in the self-regulation window
Author :
Lee, Keun ; Lee, Hyun Ju ; Kim, Gun Hwan ; Hwang, Cheol Seong
Author_Institution :
Inter-Univ. Semicond. Res. Center, Seoul
Abstract :
The influence of in-situ surface treatment of Ir electrode before metal-organic chemical vapor deposition of Pb(Zr0.2,Ti0.8)O3 (PZT) thin films on the self-regulation process window [constant Pb concentration in the film irrespective of the precursor input ratio (Pb/(Zr+Ti)] was investigated. The effect of the various process parameteres, such as the pre-treatment of Ir electrode, susceptor and chamber wall cleaning, and total precursor flow rate on the self-regulation window was investigated. Prevention of iridium oxide formation by Ar pre-treatment was crucial to improve ferroelectric performances of PZT films within the self-regulation process window.
Keywords :
MOCVD; electrodes; ferroelectric thin films; iridium; lead compounds; surface morphology; surface roughness; surface treatment; Ir; PZT; PZT thin films; PbZr0.2Ti0.8O3; electrode; ferroelectric film; ferroelectric performance; metal-organic chemical vapor deposition; precursor flow rate; self-regulation window; surface morphology; surface roughness; surface treatment; Argon; Chemical vapor deposition; Electrodes; Ferroelectric films; MOCVD; Random access memory; Semiconductor films; Sputtering; Strontium; Surface treatment;
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2007.4393204
