Title :
Preparation of Ir-Based Electrode Thin Films by Liquid-Delivery MOCVD
Author :
Fujisawa, Hironori ; Yamashita, Daisuke ; Fukui, Hidetada ; Shimizu, Masaru ; Tada, Ken-Ichi ; Yamakawa, Tetsu ; Kawano, Kazuhisa ; Oshima, Noriaki
Author_Institution :
Univ. of Hyogo, Himeji
Abstract :
We report the preparation of Ir-based electrode thin films by liquid-delivery MOCVD using a vaporizer system. A novel liquid precursor, Ir(EtCp)(C2H4)2, and etylcyclohexane (ECH) were used as a precursor and solvent, respectively. (111)-oriented Ir thin films with a root-mean-square surface roughness of 2.2 nm and an electrical resistivity of 14 muOmega-cm were successfully obtained on SiO2/Si at 400degC. However, it was difficult to form IrO2 films because oxygen was consumed for the decomposition of the solvent, ECH. The step coverage of-40% was obtained for Ir films on SiO2-stepped substrate with an aspect ratio of 0.7.
Keywords :
MOCVD; electrical resistivity; ferroelectric thin films; iridium; iridium compounds; surface roughness; Ir; IrO2; decomposition; electrical resistivity; electrode thin films; etylcyclohexane; liquid-delivery MOCVD; resistivity 14 muohmcm; surface roughness; vaporizer system; Electric resistance; Electrodes; Ferroelectric films; Ferroelectric materials; MOCVD; Solids; Solvents; Sputtering; Temperature; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2007.4393209
