Preparation of Ir-Based Electrode Thin Films by Liquid-Delivery MOCVD

Author

Fujisawa, Hironori ; Yamashita, Daisuke ; Fukui, Hidetada ; Shimizu, Masaru ; Tada, Ken-Ichi ; Yamakawa, Tetsu ; Kawano, Kazuhisa ; Oshima, Noriaki

Author_Institution

Univ. of Hyogo, Himeji

fYear

2007

fDate

27-31 May 2007

Firstpage

189

Lastpage

192

Abstract

We report the preparation of Ir-based electrode thin films by liquid-delivery MOCVD using a vaporizer system. A novel liquid precursor, Ir(EtCp)(C₂H₄)₂, and etylcyclohexane (ECH) were used as a precursor and solvent, respectively. (111)-oriented Ir thin films with a root-mean-square surface roughness of 2.2 nm and an electrical resistivity of 14 muOmega-cm were successfully obtained on SiO₂/Si at 400degC. However, it was difficult to form IrO₂ films because oxygen was consumed for the decomposition of the solvent, ECH. The step coverage of-40% was obtained for Ir films on SiO₂-stepped substrate with an aspect ratio of 0.7.

Keywords

MOCVD; electrical resistivity; ferroelectric thin films; iridium; iridium compounds; surface roughness; Ir; IrO₂; decomposition; electrical resistivity; electrode thin films; etylcyclohexane; liquid-delivery MOCVD; resistivity 14 muohmcm; surface roughness; vaporizer system; Electric resistance; Electrodes; Ferroelectric films; Ferroelectric materials; MOCVD; Solids; Solvents; Sputtering; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Conference_Location

Nara

ISSN

1099-4734

Print_ISBN

978-1-4244-1334-8

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2007.4393209

Filename

4393209