25-Gb/s 1310-nm Optical Receiver Based on a Sub-5-V Waveguide-Coupled Germanium Avalanche Photodiode

Author

Chen, H.T. ; Verbist, J. ; Verheyen, P. ; De Heyn, P. ; Lepage, G. ; De Coster, J. ; Absil, P. ; Moeneclaey, B. ; Yin, X. ; Bauwelinck, J. ; Van Campenhout, J. ; Roelkens, G.

Author_Institution

Interuniv. Microelectron. Center (IMEC), Leuven, Belgium

Volume

7

Issue

4

fYear

2015

fDate

Aug. 2015

Firstpage

1

Lastpage

9

Abstract

We demonstrate low-voltage waveguide-coupled germanium avalanche photodetectors (APDs) with a (wafer-scale mean) gain×bandwidth product of 140 GHz at -5 V by utilizing a 185-nm-thick Ge layer. An optical receiver based on such an APD operating up to 25 Gb/s is demonstrated.

Keywords

avalanche photodiodes; elemental semiconductors; germanium; optical receivers; optical waveguides; Ge; bit rate 25 Gbit/s; frequency 140 GHz; low-voltage avalanche photodiode; optical receiver; size 185 nm; voltage 5 V; wafer-scale mean; waveguide-coupled germanium avalanche photodiode; wavelength 1310 nm; Electric fields; Gain measurement; Optical receivers; Optical variables measurement; Optical waveguides; Power measurement; Sensitivity; Avalanche photodetectors; Avalanche photodetectors (APDs); Optical interconnects; Silicon photonics; optical interconnects; silicon photonics;

fLanguage

English

Journal_Title

Photonics Journal, IEEE

Publisher

ieee

ISSN

1943-0655

Type

jour

DOI

10.1109/JPHOT.2015.2460116

Filename

7165592