DocumentCode :
2276099
Title :
Study on resistive coupling interference of Operation of Disconnecting Switch in GIS substation
Author :
Niu, Bo ; Wang, Sen ; Xie, Xiuyu ; Pu, Lu ; Li, Zhizhong ; Zhou, Chuanming
Author_Institution :
Shaanxi Electr. Power Res. Inst., Xi´´an, China
fYear :
2012
fDate :
17-20 Sept. 2012
Firstpage :
76
Lastpage :
80
Abstract :
Operation of Disconnecting Switch (DS) and Circuit Breaker (CB) can produce very fast transient overvoltage (VFTO) in GIS. During the transmission process of VFTO in GIS, as the backflow route of VFTO, corresponding high frequency interference can be induced on the shell of GIS. High-frequency interference´s entering into grounding network can cause transient ground potential rise (TGPR), resulting in resistance interference. The paper focuses on the transmission characteristics of high frequency interference caused by VFTO, and analyzes factors affecting interference voltage transmission through changing grounding network parameters. For the typical grounding network structure and actual grounding network model in a substation, transmission factors affecting interference voltage in the grounding network are analyzed through changing grounding network parameters to discuss the interference caused by DS operation on GIS substation via resistance coupling mode.
Keywords :
circuit breakers; earthing; electromagnetic coupling; gas insulated substations; interference suppression; overvoltage protection; power system transients; power transmission protection; CB; DS; DS operation; GIS; TGPR; VFTO; circuit breaker; disconnecting switch; gas insulated substation; grounding network; high frequency interference; interference voltage transmission; resistance interference; resistive coupling interference; transient ground potential rise; transmission factor; very fast transient overvoltage; Couplings; Electric potential; Gas insulation; Grounding; Interference; Soil; Surface waves;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Voltage Engineering and Application (ICHVE), 2012 International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-4747-1
Type :
conf
DOI :
10.1109/ICHVE.2012.6357008
Filename :
6357008
Link To Document :
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