DocumentCode
2276099
Title
Study on resistive coupling interference of Operation of Disconnecting Switch in GIS substation
Author
Niu, Bo ; Wang, Sen ; Xie, Xiuyu ; Pu, Lu ; Li, Zhizhong ; Zhou, Chuanming
Author_Institution
Shaanxi Electr. Power Res. Inst., Xi´´an, China
fYear
2012
fDate
17-20 Sept. 2012
Firstpage
76
Lastpage
80
Abstract
Operation of Disconnecting Switch (DS) and Circuit Breaker (CB) can produce very fast transient overvoltage (VFTO) in GIS. During the transmission process of VFTO in GIS, as the backflow route of VFTO, corresponding high frequency interference can be induced on the shell of GIS. High-frequency interference´s entering into grounding network can cause transient ground potential rise (TGPR), resulting in resistance interference. The paper focuses on the transmission characteristics of high frequency interference caused by VFTO, and analyzes factors affecting interference voltage transmission through changing grounding network parameters. For the typical grounding network structure and actual grounding network model in a substation, transmission factors affecting interference voltage in the grounding network are analyzed through changing grounding network parameters to discuss the interference caused by DS operation on GIS substation via resistance coupling mode.
Keywords
circuit breakers; earthing; electromagnetic coupling; gas insulated substations; interference suppression; overvoltage protection; power system transients; power transmission protection; CB; DS; DS operation; GIS; TGPR; VFTO; circuit breaker; disconnecting switch; gas insulated substation; grounding network; high frequency interference; interference voltage transmission; resistance interference; resistive coupling interference; transient ground potential rise; transmission factor; very fast transient overvoltage; Couplings; Electric potential; Gas insulation; Grounding; Interference; Soil; Surface waves;
fLanguage
English
Publisher
ieee
Conference_Titel
High Voltage Engineering and Application (ICHVE), 2012 International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4673-4747-1
Type
conf
DOI
10.1109/ICHVE.2012.6357008
Filename
6357008
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