Title :
Light sources for photonic circuitry based on Si
Author :
Ching-Fuh Lin ; Eih-Zhe Liang ; Ting-Wien Su ; Hsing-Hung Hsieh ; Wei-Fang Su ; Miin-Jang Chen
Author_Institution :
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Summary from only given. We report the possibility of breaking the indirect-bandgap limitation to efficiently generate light from Si. We theoretically and experimentally discovered that carrier localization could enhance radiative recombination corresponding to bandgap energy of Si for orders of magnitudes. Nearly lasing actions corresponding to Si bandgap energy were even observed with the enhanced radiative recombination.
Keywords :
MIS structures; electron-hole recombination; light sources; photoluminescence; photonic band gap; silicon; stimulated emission; Si; Si bandgap energy; bandgap energy; carrier localization; enhanced radiative recombination; indirect-bandgap limitation; lasing actions; radiative recombination; Charge carrier processes; Circuits; Excitons; Light scattering; Light sources; Particle scattering; Phonons; Photonic band gap; Photonic crystals; Radiative recombination;
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
DOI :
10.1109/CLEO.2002.1034400
