Improvement in Dielectric and Tunable Properties of Fe-Doped Ba0.6Sr0.4TiO3 Thin Films Grown by Pulsed Laser Deposition

Author

Gong, Jia ; Cheng, Jinrong ; Zhu, Weicheng ; Yu, Shengwen ; Wu, Wenbiao ; Meng, Zhongyan

Author_Institution

Shanghai Univ., Shanghai

fYear

2007

fDate

27-31 May 2007

Firstpage

216

Lastpage

218

Abstract

Fe-doped Ba_0.6Sr_0.4TiO₃ (BST) thin films were prepared on Pt/Si substrates by the pulsed laser deposition method. The concentrations of Fe dopants vary from 0.1 mol% to 1.0 mol%. Our results indicate that a certain amount of Fe dopants can decrease the dielectric loss of BST thin films without causing the significant reduction of the tunability. The leakage current of BST thin films was also reduced by addition of Fe dopants. BST thin films doped with 0.3 mol% Fe ions show a minimum dielectric loss of 0.88 % at 10 Hz, which is 1.7 % for the undoped BST films. Moreover, the 0.3 mol% Fe-doped BST films reveal a maximum figure of merit (FOM) of 51, indicating the improved comprehensive dielectric and tunable properties.

Keywords

barium compounds; dielectric losses; dielectric thin films; doping profiles; iron; leakage currents; platinum; pulsed laser deposition; silicon; strontium compounds; Ba_0.6Sr_0.4TiO₃:Fe-Pt-Si; Pt-Si; dielectric loss; dielectric properties; doped thin films; leakage current; pulsed laser deposition; tunable properties; Binary search trees; Dielectric losses; Dielectric substrates; Dielectric thin films; Iron; Pulsed laser deposition; Semiconductor thin films; Sputtering; Strontium; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Conference_Location

Nara

ISSN

1099-4734

Print_ISBN

978-1-4244-1334-8

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2007.4393219

Filename

4393219