Title :
Improvement in Dielectric and Tunable Properties of Fe-Doped Ba0.6Sr0.4TiO3 Thin Films Grown by Pulsed Laser Deposition
Author :
Gong, Jia ; Cheng, Jinrong ; Zhu, Weicheng ; Yu, Shengwen ; Wu, Wenbiao ; Meng, Zhongyan
Author_Institution :
Shanghai Univ., Shanghai
Abstract :
Fe-doped Ba0.6Sr0.4TiO3 (BST) thin films were prepared on Pt/Si substrates by the pulsed laser deposition method. The concentrations of Fe dopants vary from 0.1 mol% to 1.0 mol%. Our results indicate that a certain amount of Fe dopants can decrease the dielectric loss of BST thin films without causing the significant reduction of the tunability. The leakage current of BST thin films was also reduced by addition of Fe dopants. BST thin films doped with 0.3 mol% Fe ions show a minimum dielectric loss of 0.88 % at 10 Hz, which is 1.7 % for the undoped BST films. Moreover, the 0.3 mol% Fe-doped BST films reveal a maximum figure of merit (FOM) of 51, indicating the improved comprehensive dielectric and tunable properties.
Keywords :
barium compounds; dielectric losses; dielectric thin films; doping profiles; iron; leakage currents; platinum; pulsed laser deposition; silicon; strontium compounds; Ba0.6Sr0.4TiO3:Fe-Pt-Si; Pt-Si; dielectric loss; dielectric properties; doped thin films; leakage current; pulsed laser deposition; tunable properties; Binary search trees; Dielectric losses; Dielectric substrates; Dielectric thin films; Iron; Pulsed laser deposition; Semiconductor thin films; Sputtering; Strontium; Tunable circuits and devices;
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2007.4393219
