The dielectric properties of Ba0.6Sr0.4CrxTi1-xO3 thin films prepared by pulsed laser deposition

Author

Yu, Shengwen ; Cheng, Jinrong ; Li, Ruxing ; Zhu, Weicheng ; Meng, Zhongyan

Author_Institution

Shanghai Univ., Shanghai

fYear

2007

fDate

27-31 May 2007

Firstpage

219

Lastpage

221

Abstract

Ba_0.6Sr_0.4Cr_xTi_1-xO₃ (BSCT) films were prepared by pulsed laser deposition with the value of x varying from 0 mol% to 2.0 mol%. X-ray diffraction measurement detected an increasing in lattice parameters which could be due to the characteristic of film growth process. Dielectric properties of the BSCT films were measured. The dissipation factors were decreased in the Cr-doped films. The highest Figure of Merit (FOM) value of 33.3 was obtained in 1.0 mol%-doped BSCT film. As a result, the effect of Cr doping is positive.

Keywords

X-ray diffraction; barium compounds; chromium compounds; dielectric losses; dielectric thin films; doping profiles; lattice constants; pulsed laser deposition; strontium compounds; Ba_0.6Sr_0.4Cr_xTi_1-xO₃; X-ray diffraction; dielectric losses; dielectric properties; dissipation factors; doping concentration; lattice parameters; pulsed laser deposition; thin films; Chromium; Dielectric measurements; Lattices; Optical pulses; Pulsed laser deposition; Strontium; X-ray detection; X-ray detectors; X-ray diffraction; X-ray lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Conference_Location

Nara

ISSN

1099-4734

Print_ISBN

978-1-4244-1334-8

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2007.4393220

Filename

4393220