Title :
In-line metrology capability for epitaxial multi-stack SiGe layers
Author :
Le Cunff, D. ; Couvrat, S. ; Abbate, F.
Author_Institution :
Metrol. Group, STMicroelectron., Crolles, France
Abstract :
This paper describes a study performed to evaluate inline metrology techniques for the monitoring of multiple SiGe layers in a manufacturing environment. Comparative measurements between High Resolution X-Ray Diffraction (HRXRD), X-Ray Reflectometry (XRR) and spectroscopic ellipsometry (SE) optical technique were carried out on a specifically-design wafer set. Strength and drawback of each technique are presented. An innovative approach of combining techniques for such application is explored and the results confirm the benefit of this strategy.
Keywords :
Ge-Si alloys; X-ray diffraction; ellipsometry; monitoring; performance evaluation; reflectometry; semiconductor epitaxial layers; HRXRD; SE optical technique; SiGe; X-ray reflectometry; XRR; comparative measurements; epitaxial multistack layres; high resolution X-Ray diffraction; in-line metrology capability; inline metrology techniques; manufacturing environment; monitoring; performance evaluation; specifically-design wafer set; spectroscopic ellipsometry optical technique; Ellipsometry; Epitaxial growth; Metrology; Silicon; Silicon germanium; Thickness measurement; US Department of Energy; Metrology; SiGe; X-ray diffraction; X-ray reflectivity; ellipsometry; thickness;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2012 23rd Annual SEMI
Conference_Location :
Saratoga Springs, NY
Print_ISBN :
978-1-4673-0350-7
DOI :
10.1109/ASMC.2012.6212880
