In-line metrology capability for epitaxial multi-stack SiGe layers

Author

Le Cunff, D. ; Couvrat, S. ; Abbate, F.

Author_Institution

Metrol. Group, STMicroelectron., Crolles, France

fYear

2012

fDate

15-17 May 2012

Firstpage

115

Lastpage

121

Abstract

This paper describes a study performed to evaluate inline metrology techniques for the monitoring of multiple SiGe layers in a manufacturing environment. Comparative measurements between High Resolution X-Ray Diffraction (HRXRD), X-Ray Reflectometry (XRR) and spectroscopic ellipsometry (SE) optical technique were carried out on a specifically-design wafer set. Strength and drawback of each technique are presented. An innovative approach of combining techniques for such application is explored and the results confirm the benefit of this strategy.

Keywords

Ge-Si alloys; X-ray diffraction; ellipsometry; monitoring; performance evaluation; reflectometry; semiconductor epitaxial layers; HRXRD; SE optical technique; SiGe; X-ray reflectometry; XRR; comparative measurements; epitaxial multistack layres; high resolution X-Ray diffraction; in-line metrology capability; inline metrology techniques; manufacturing environment; monitoring; performance evaluation; specifically-design wafer set; spectroscopic ellipsometry optical technique; Ellipsometry; Epitaxial growth; Metrology; Silicon; Silicon germanium; Thickness measurement; US Department of Energy; Metrology; SiGe; X-ray diffraction; X-ray reflectivity; ellipsometry; thickness;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference (ASMC), 2012 23rd Annual SEMI

Conference_Location

Saratoga Springs, NY

ISSN

1078-8743

Print_ISBN

978-1-4673-0350-7

Type

conf

DOI

10.1109/ASMC.2012.6212880

Filename

6212880