THz electroluminescence from shallow level impurities in Si/SiGe heterostructures

Author

Lynch, Stephen A. ; Paul, Douglas J. ; Bates, R. ; Ikonic, Zoran ; Kelsall, R.W. ; Harrison, Peter ; Norris, David J. ; Cullis, A.G. ; Arnone, D.D. ; Pidgeon, C.R. ; Murzyn, P. ; Loudon, A.

Author_Institution

Cavendish Lab., Cambridge Univ., UK

fYear

2002

fDate

24-24 May 2002

Abstract

Summary from only given. THz emission is demonstrated from electrically pumped boron doped Si/SiGe heterostructures. Si/SiGe heterostructures were grown by low-pressure chemical vapour deposition system on a strain relaxed SiGe buffer. The epitaxial layer structure contained 10 uncoupled multi-quantum wells, and was designed with the aim of demonstrating intersubband transitions at THz frequencies. The material was characterised by transmission electron microscopy (TEM), energy filtered TEM (EFTEM) and energy dispersive X-rays (XRD). These results are promising for an electrically pumped Si/SiGe based laser emitting at THz frequencies, which does not require crossed electric and magnetic fields.

Keywords

Ge-Si alloys; boron; electroluminescence; elemental semiconductors; impurity states; internal stresses; semiconductor materials; semiconductor quantum wells; silicon; submillimetre wave generation; Si/SiGe heterostructures; Si:B-SiGe; TEM; THz electroluminescence; electrical pumping; intersubband transitions; low-pressure chemical vapour deposition; shallow level impurities; strain relaxed SiGe buffer; uncoupled multi-quantum wells; Boron; Capacitive sensors; Chemical vapor deposition; Electroluminescence; Epitaxial layers; Frequency; Germanium silicon alloys; Impurities; Magnetic materials; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-706-7

Type

conf

DOI

10.1109/CLEO.2002.1034408

Filename

1034408