Title :
Thin film GaN metal-semiconductor-metal photodetectors integrated onto silicon
Author :
Seo, S. ; Kang, S. ; Huang, S. ; Lee, K. ; Doolittle, W. ; Jokerst, N. ; Brown, A. ; Brooke, M.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
Summary form only given. In this paper, metal-semiconductor-metal (MSM) photodetector dark current and responsivity results for the growth of GaN on lithium gallate (LiGaO/sub 2/) substrates is reported, as well as the heterogeneous integration of thin film GaN MSM detectors onto host substrates.
Keywords :
III-V semiconductors; dark conductivity; gallium compounds; metal-semiconductor-metal structures; photodetectors; semiconductor device measurement; semiconductor thin films; thin film devices; wide band gap semiconductors; GaN; LiGaO/sub 2/; MSM detectors; MSM photodetector; Si; dark current; heterogeneous integration; lithium gallate; responsivity; silicon; thin film GaN metal-semiconductor-metal photodetectors; Fingers; Gallium nitride; Lattices; Optical imaging; Optical materials; Photodetectors; Semiconductor thin films; Silicon; Substrates; Voltage;
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
DOI :
10.1109/CLEO.2002.1034409
