Extraction of noise source from noise parameters with RF CMOS devices

Author

Kao, Yao-Huang ; Hsu, Meng-Ting ; Hsu, Yuan-Min

Author_Institution

Inst. of Commun. Eng., Nat. Chiao-Tung Univ., Hsin-Chu, Taiwan

Volume

3

fYear

2001

fDate

2001

Firstpage

1326

Abstract

Noise source extraction using a two-port network of RF CMOS devices is presented. We describe the correlation property with three different models. The correlation of the noise source with the Y model and H model show the inductive characteristics, and the ABCD (transmission matrix) shows the capacitive characteristic. All the noise parameters are measured from 0.6-6.0 GHz

Keywords

CMOS integrated circuits; MOSFET; UHF field effect transistors; field effect MMIC; integrated circuit design; integrated circuit noise; microwave field effect transistors; semiconductor device models; semiconductor device noise; two-port networks; 0.6 to 6.0 GHz; ABCD transmission matrix; H model; MOS transistor; RF CMOS devices; Y model; capacitive characteristic; correlation property; inductive characteristics; integrated circuit design; noise parameters; noise source extraction; two-port network; Circuit noise; Electronic mail; Equations; Integrated circuit measurements; Integrated circuit noise; Noise level; Noise measurement; Radio frequency; Semiconductor device modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific

Conference_Location

Taipei

Print_ISBN

0-7803-7138-0

Type

conf

DOI

10.1109/APMC.2001.985380

Filename

985380