Title :
Electronic Structure of Ferroelectric Material Probed by Soft-X-Ray Spectroscopy
Author_Institution :
Tokyo Univ. of Sci., Tokyo
Abstract :
The polarization dependence for the electronic structure of Bi4Ti3O12 (BIT) single crystal has been studied by soft-X-ray emission spectroscopy (SXES) and X-ray absorption spectroscopy. The valence band and conduction band are mainly composed of O 2p state and Ti 3d state, respectively. The SXES spectra measured at the Ti 2p absorption edge region exhibit three structures, which correspond to elastic scattering, fluorescence and soft-X-ray Raman scattering. The Raman scattering corresponds to the charge-transfer (CT) energy, which corresponds to the transition from O 2p state to unoccupied Ti 3d state. The CT energy in the a-c plane is different from that in the a-b plane. The difference of CT energy originates to the lattice constant and hybridization effect in BIT single crystal.
Keywords :
Raman spectra; X-ray absorption spectra; X-ray emission spectra; bismuth compounds; conduction bands; electronic structure; ferroelectric materials; fluorescence; valence bands; BIT single crystal; Bi4Ti3O12; SXES; X-ray absorption spectroscopy; a-c plane; absorption edge; charge-transfer energy; conduction band; elastic scattering; electronic structure; ferroelectric material; fluorescence; hybridization effect; lattice constant; polarization; soft-X-ray emission spectroscopy; valence band; Electromagnetic wave absorption; Ferroelectric materials; Fluorescence; Gratings; Optical polarization; Photonic crystals; Physics; Raman scattering; Spectroscopy; X-ray scattering;
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2007.4393233