Title :
Mutually exclusive behavior of In and N atom in highly strained GaInNAs/GaAs quantum wells by MOCVD
Author :
Bing-Ruey Wu ; Kun-Fu Huang ; Nien-Tz Yeh ; Wen-Jang Ho
Author_Institution :
Telecommun. Lab., Chung-Hwa Telecom. Co. Ltd, Taoyuan, Taiwan
Abstract :
Summary form only given. The study focuses on GaInNAs/GaAs single quantum wells (QWs) grown by MOCVD with different group III source partial pressure ratio. Rapid thermal annealing (RTA) is performed to enhance the optical properties. Photoluminescence (PL) and double crystal X-ray diffraction (DCD) are measured to evaluate the structural properties of the grown GaInNAs/GaAs SQW. The results show the mutually exclusive properties between indium and nitrogen atoms in GaInNAs material.
Keywords :
III-V semiconductors; MOCVD; X-ray diffraction; gallium arsenide; gallium compounds; indium compounds; interface structure; photoluminescence; rapid thermal annealing; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; GaInNAs-GaAs; In atom; MOCVD; N atom; RTA; double crystal X-ray diffraction; highly strained GaInNAs/GaAs quantum wells; mutually exclusive properties; optical properties; photoluminescence; rapid thermal annealing; single quantum wells; structural properties; Atom optics; Gain measurement; Gallium arsenide; Indium; MOCVD; Nitrogen; Optical diffraction; Photoluminescence; Rapid thermal annealing; X-ray diffraction;
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
DOI :
10.1109/CLEO.2002.1034412
