Title :
Influences of etcher chamber condition on critical-dimension shifts in advanced floating gate etching process
Author :
Chang, Sheng-Yuan ; Chen, Yu-Chung ; Wei, An Chyi ; Lee, Hong-Ji ; Lian, Nan-Tzu ; Yang, Tahone ; Chen, Kuang-Chao ; Lu, Chih-Yuan
Author_Institution :
Technol. Dev. Center, Macronix Int. Co., Ltd., Hsinchu, Taiwan
Abstract :
The authors investigated the correlation between variation of post-etch critical dimension (ECD) and etcher chamber condition during floating gate etching process. This paper presents the significantly effective method of utilizing the SF6/O2-based very long plasma-chamber cleaning or the novel Transformer coupled plasma (TCP) window temperature design not only achieves a stable gate CD (CD variation <; 2nm) but also simplifies etching process.
Keywords :
etching; plasma deposition; sulphur compounds; ECD; SF6-O2; TCP window temperature design; advanced floating gate etching process; critical-dimension shift; etcher chamber condition; plasma-chamber cleaning; post-etch critical dimension; transformer coupled plasma; Cleaning; Etching; Logic gates; Nonvolatile memory; Plasma temperature; Polymers; Critical dimension (CD); Etcher chamber condition; Transformer coupled plasma (TCP); Tri-layer approach;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2012 23rd Annual SEMI
Conference_Location :
Saratoga Springs, NY
Print_ISBN :
978-1-4673-0350-7
DOI :
10.1109/ASMC.2012.6212899
