DocumentCode :
2276690
Title :
Advanced metrology and gas purifier yield improvement
Author :
Srivastava, Abneesh
Author_Institution :
Gas Microcontamination Control, Entegris, Inc., San Diego, CA, USA
fYear :
2012
fDate :
15-17 May 2012
Firstpage :
161
Lastpage :
164
Abstract :
Advanced spectrometric and spectroscopic metrology techniques for moisture measurement are employed to characterize inert (nitrogen, noble) and hydrogen gas purifier performance. Material properties relevant to efficient contaminant adsorption on regenerable media are systematically probed to achieve a marked improvement in purifier moisture removal capacity and efficiency. Gains in moisture dry down, upset recovery time, purity stability and low pressure purity are made to facilitate semiconductor processes targeting high device yield.
Keywords :
contamination; hydrogen; mass spectrometers; moisture measurement; semiconductor device measurement; spectroscopy; advanced spectrometric techniques; atmospheric pressure ionization mass spectrometer; contaminant adsorption; hydrogen gas purifier yield improvement; low pressure purity; material property; moisture dry down; moisture measurement; purifier moisture removal capacity; purity stability; regenerable media; semiconductor device fabrication process; spectroscopic metrology techniques; upset recovery time; Atmospheric measurements; Manifolds; Media; Metrology; Moisture; Purification; Ultraviolet sources; purifier stability; removal efficiency; sub-atmospheric;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2012 23rd Annual SEMI
Conference_Location :
Saratoga Springs, NY
ISSN :
1078-8743
Print_ISBN :
978-1-4673-0350-7
Type :
conf
DOI :
10.1109/ASMC.2012.6212902
Filename :
6212902
Link To Document :
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