DocumentCode
2276722
Title
Analysis of an effect of perturbations in SWHM and illuminating optical scheme parameters on an aerial image
Author
Borisov, M.V. ; Chelyubeev, D.A. ; Chernik, V.V. ; Gavrikov, A.A. ; Knyazkov, D.Y. ; Mikheev, P.A. ; Rakhovskiy, V.I. ; Shamaev, A.S.
Author_Institution
NANOTECH SWHL, Moscow, Russia
fYear
2012
fDate
15-17 May 2012
Firstpage
165
Lastpage
169
Abstract
There is considered a new method of sub-wavelength holographic lithography (SWHL) for creation of IC layers aerial images. This approach proposes to use very local defects tolerable holographic patterns and simple optical scheme for photoresist exposure. The paper investigates influence of different perturbations occurring during either mask manufacturing or photoresist exposing on resulting topology image. Simulation showed that practically all perturbations which appear when using modern equipment do not significantly distort the resulting image, while the most problematic phase noise effects could be removed by introducing them into sub-wavelength holographic mask (SWHM) calculation.
Keywords
holography; lithography; masks; perturbation techniques; IC layers aerial images; SWHM; holographic patterns; mask manufacturing; perturbations; photoresist exposure; subwavelength holographic lithography; Adaptive optics; Image quality; Image reconstruction; Integrated optics; Optical distortion; Optical imaging; Topology; imaging; sub-wavelength holographic lithography; sub-wavelength holographic mask;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference (ASMC), 2012 23rd Annual SEMI
Conference_Location
Saratoga Springs, NY
ISSN
1078-8743
Print_ISBN
978-1-4673-0350-7
Type
conf
DOI
10.1109/ASMC.2012.6212903
Filename
6212903
Link To Document