DocumentCode :
2276722
Title :
Analysis of an effect of perturbations in SWHM and illuminating optical scheme parameters on an aerial image
Author :
Borisov, M.V. ; Chelyubeev, D.A. ; Chernik, V.V. ; Gavrikov, A.A. ; Knyazkov, D.Y. ; Mikheev, P.A. ; Rakhovskiy, V.I. ; Shamaev, A.S.
Author_Institution :
NANOTECH SWHL, Moscow, Russia
fYear :
2012
fDate :
15-17 May 2012
Firstpage :
165
Lastpage :
169
Abstract :
There is considered a new method of sub-wavelength holographic lithography (SWHL) for creation of IC layers aerial images. This approach proposes to use very local defects tolerable holographic patterns and simple optical scheme for photoresist exposure. The paper investigates influence of different perturbations occurring during either mask manufacturing or photoresist exposing on resulting topology image. Simulation showed that practically all perturbations which appear when using modern equipment do not significantly distort the resulting image, while the most problematic phase noise effects could be removed by introducing them into sub-wavelength holographic mask (SWHM) calculation.
Keywords :
holography; lithography; masks; perturbation techniques; IC layers aerial images; SWHM; holographic patterns; mask manufacturing; perturbations; photoresist exposure; subwavelength holographic lithography; Adaptive optics; Image quality; Image reconstruction; Integrated optics; Optical distortion; Optical imaging; Topology; imaging; sub-wavelength holographic lithography; sub-wavelength holographic mask;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2012 23rd Annual SEMI
Conference_Location :
Saratoga Springs, NY
ISSN :
1078-8743
Print_ISBN :
978-1-4673-0350-7
Type :
conf
DOI :
10.1109/ASMC.2012.6212903
Filename :
6212903
Link To Document :
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