DocumentCode
2276798
Title
The study of the discharge mechanism and characteristics of micro-voids in the solid dielectric
Author
Lihua Chen ; Zhong Zheng ; Min Chen ; Hong Yu
Author_Institution
State Key Lab. for Alternate Electr. Power Syst. with Renewable Energy Sources, North China Electr. Power Univ., Beijing, China
fYear
2012
fDate
17-20 Sept. 2012
Firstpage
575
Lastpage
578
Abstract
The insulation breakdown caused by micro-voids discharge in solid dielectrics is one of the main causes of insulation failure of the electrical equipment. The concentration of electric field arose from micro-voids can´t be measured from the outside directly, so the theoretical calculation is of great significance to the equipment insulation design, the work requirements of the electric field and fault detection. On the basis of nonlinear transient multi-coupled computational model, this paper studies the impact of the size, the location, the number of the micro-voids and the space charge on the discharge process. The size of the micro-void that is the easiest to discharge is determined. The temperature of the dielectric and the micro-voids will rise after discharging, resulting in the increasing of the conductivity and the mobility of the space charge both of which affect the electric field distribution in turn. So the distribution of the temperature is also analyzed in this paper.
Keywords
discharges (electric); electric breakdown; electric fields; fault diagnosis; insulation; power apparatus; space charge; temperature distribution; voids (solid); discharge mechanism; electric field distribution; electrical equipment insulation; fault detection; insulation breakdown; insulation failure; microvoid discharge; nonlinear transient multicoupled computational model; solid dielectric; space charge conductivity; space charge mobility; temperature distribution; Conductivity; Dielectrics; Discharges (electric); Electric fields; Solids; Space charge; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
High Voltage Engineering and Application (ICHVE), 2012 International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4673-4747-1
Type
conf
DOI
10.1109/ICHVE.2012.6357048
Filename
6357048
Link To Document