• DocumentCode
    2276798
  • Title

    The study of the discharge mechanism and characteristics of micro-voids in the solid dielectric

  • Author

    Lihua Chen ; Zhong Zheng ; Min Chen ; Hong Yu

  • Author_Institution
    State Key Lab. for Alternate Electr. Power Syst. with Renewable Energy Sources, North China Electr. Power Univ., Beijing, China
  • fYear
    2012
  • fDate
    17-20 Sept. 2012
  • Firstpage
    575
  • Lastpage
    578
  • Abstract
    The insulation breakdown caused by micro-voids discharge in solid dielectrics is one of the main causes of insulation failure of the electrical equipment. The concentration of electric field arose from micro-voids can´t be measured from the outside directly, so the theoretical calculation is of great significance to the equipment insulation design, the work requirements of the electric field and fault detection. On the basis of nonlinear transient multi-coupled computational model, this paper studies the impact of the size, the location, the number of the micro-voids and the space charge on the discharge process. The size of the micro-void that is the easiest to discharge is determined. The temperature of the dielectric and the micro-voids will rise after discharging, resulting in the increasing of the conductivity and the mobility of the space charge both of which affect the electric field distribution in turn. So the distribution of the temperature is also analyzed in this paper.
  • Keywords
    discharges (electric); electric breakdown; electric fields; fault diagnosis; insulation; power apparatus; space charge; temperature distribution; voids (solid); discharge mechanism; electric field distribution; electrical equipment insulation; fault detection; insulation breakdown; insulation failure; microvoid discharge; nonlinear transient multicoupled computational model; solid dielectric; space charge conductivity; space charge mobility; temperature distribution; Conductivity; Dielectrics; Discharges (electric); Electric fields; Solids; Space charge; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Voltage Engineering and Application (ICHVE), 2012 International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4673-4747-1
  • Type

    conf

  • DOI
    10.1109/ICHVE.2012.6357048
  • Filename
    6357048