Characteristics of intersubband absorption at optical communication wavelengths in GaN/AlN multiple quantum wells

Author

Iizuka, Norio ; Kaneko, Kunihiko ; Suzuki, Nobuhiro

Author_Institution

Corporate Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan

fYear

2002

fDate

24-24 May 2002

Firstpage

652

Abstract

Summary form only given. The authors report the intersubband transition at 1.3-1.5 /spl mu/m in a GaN/AlN MQW structure stacked with single quantum wells. By adopting AlN, the highest energy barrier can be achieved for a GaN well, which leads to good carrier confinement at the upper level. They also measured the saturation intensity, which is a necessary parameter for device designs.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; interface states; light absorption; semiconductor quantum wells; semiconductor superlattices; wide band gap semiconductors; 1.3 to 1.5 micron; GaN-AlN; GaN/AlN multiple quantum wells; ISBT; MQW structure; carrier confinement; energy barrier; intersubband absorption; optical communication wavelengths; saturation intensity; single quantum wells; upper level; Absorption; Gallium nitride; Molecular beam epitaxial growth; Optical fiber communication; Optical pulse generation; Pulse amplifiers; Quantum well devices; Semiconductor devices; Stimulated emission; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-706-7

Type

conf

DOI

10.1109/CLEO.2002.1034439

Filename

1034439