DocumentCode
2276818
Title
Characterization of MOCVD-grown InNAs/GaAs quantum wells
Author
Hongjun Cao ; Nuntawong, N. ; El-Emawy, A.-R.A. ; Osinski, M.
Author_Institution
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
fYear
2002
fDate
24-24 May 2002
Firstpage
653
Abstract
Summary form only given. In this paper, we report the successful MOCVD growth of InNAs QWs using dimethylhydrazine (DMHy) as the nitrogen source. Crystalline quality, composition, and thicknesses of the grown layers were investigated by high- resolution X-ray diffraction.
Keywords
III-V semiconductors; MOCVD; X-ray diffraction; gallium arsenide; indium compounds; interface structure; semiconductor growth; semiconductor quantum wells; stoichiometry; vapour phase epitaxial growth; InNAs-GaAs; MOCVD growth; MOCVD-grown InNAs/GaAs quantum wells; composition; crystalline quality; dimethylhydrazine; high-resolution X-ray diffraction; thickness; Absorption; Aluminum gallium nitride; Electrons; Gallium arsenide; Gallium nitride; Lattices; MOCVD; Nitrogen; Plasma materials processing; Quantum well devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Long Beach, CA, USA
Print_ISBN
1-55752-706-7
Type
conf
DOI
10.1109/CLEO.2002.1034440
Filename
1034440
Link To Document