DocumentCode
2276902
Title
Substrate effects on the novel domain structure of (100)/(001)-oriented epitaxial PbTiO3 thick films
Author
Ikariyama, R. ; Nakaki, H. ; Kim, Yong Kwan ; Nishida, Ken ; Saito, Keisuke ; Funakubo, Hiroshi
Author_Institution
Tokyo Inst. of Technol., Yokohama
fYear
2007
fDate
27-31 May 2007
Firstpage
357
Lastpage
359
Abstract
(100)/(001)-oriented epitaxial PbTiO3 thick films above 1 mum in thickness were grown on (001)cSrRuO3//(001)LaNiO3//(001)CeO2//(001)YSZ// (001)Si, (001)KTaO3 and (001)SrTiO3 substrates at 600degC by metalorganic chemical vapor deposition. The domain structures of the PbTiO3 films grown on the various substrates having different thermal expansion coefficient were investigated by two-dimensional reciprocal space mapping using X-ray diffraction. Their similar novel domain structures consisted of a- and c-domains were observed irrespective of the kinds of the substrates. However, the tilting angles of a- and c-domains depended on their c-domain volume fractions. These results suggests that the volume fraction of c-domain is a key factor for identify the novel domain structure.
Keywords
X-ray diffraction; chemical vapour deposition; electric domains; ferroelectric thin films; lead compounds; thermal expansion; (100)/(001)-oriented epitaxial thick films; KTaO3; PbTiO3; SrRuO3-LaNiO3-CeO2-Y2O3ZrO2-Si; SrTiO3; X-ray diffraction; c-domain volume fractions; domain structure; metalorganic chemical vapor deposition; substrate effects; temperature 600 degC; thermal expansion coefficient; tilting angles; two-dimensional reciprocal space mapping; volume fraction; Chemical vapor deposition; Diffraction; Ferroelectric films; Ferroelectric materials; Inorganic materials; Nonvolatile memory; Random access memory; Substrates; Thick films; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location
Nara
ISSN
1099-4734
Print_ISBN
978-1-4244-1334-8
Electronic_ISBN
1099-4734
Type
conf
DOI
10.1109/ISAF.2007.4393264
Filename
4393264
Link To Document