DocumentCode
227693
Title
3,000+ Hours continuous operation of GaN-on-Diamond HEMTs at 350°c channel temperature
Author
Ejeckam, F. ; Babic, Dubravko ; Faili, F. ; Francis, Daniel ; Lowe, Frank ; Diduck, Quentin ; Khandavalli, Chandra ; Twitchen, Daniel ; Bolliger, Bruce
Author_Institution
Element Six Technol., US Corp., Santa Clara, CA, USA
fYear
2014
fDate
9-13 March 2014
Firstpage
242
Lastpage
246
Abstract
The authors report for the first time the observation of GaN-on-Diamond HEMTs each operating continuously at channel temperatures of 290°C and 350°C for 9,000+ hrs and 3,000+ hrs respectively per HEMT. No catastrophic failures were observed whereas all the control GaN-on-Si HEMTs exhibited catastrophic failures.
Keywords
III-V semiconductors; diamond; gallium compounds; high electron mobility transistors; silicon; wide band gap semiconductors; GaN; GaN-on-Si HEMTs; GaN-on-diamond HEMTs; Si; catastrophic failures; channel temperature; gallium nitride; temperature 290 C; temperature 350 C; Aluminum gallium nitride; Diamonds; Gallium nitride; HEMTs; Logic gates; MODFETs; Temperature measurement; Gallium Nitride, Diamond, HEMT, Power Amplifier, GaN; Reliability; on-Diamond;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM), 2014 30th Annual
Conference_Location
San Jose, CA
Type
conf
DOI
10.1109/SEMI-THERM.2014.6892247
Filename
6892247
Link To Document